Silicon Carbide Seed wafer type 4H Dia 157±0.5mm thickness 500±50um monocrystall area ＞153mm
4H Silicon Carbide Seed's abstract
In the field of silicon carbide (SiC) crystal growth, production-grade SiC seed wafers are essential for creating high-performance crystals. These wafers act as the starting material for single-crystal SiC growth, used in high-temperature, high-power electronic devices. Production-grade wafers must meet strict criteria for surface uniformity, purity, and defect levels to support the growth of defect-minimized SiC crystals. The use of seed wafers ensures consistent crystal structures and is crucial in power semiconductor devices like diodes and transistors. High-quality seed wafers contribute to the efficiency and durability of SiC components in various industries.
4H Silicon Carbide Seed's photo
4H Silicon Carbide Seed's properties
SiC seed wafers are specifically designed to withstand the high temperatures required for SiC crysta growth. Processes
such as physical vapor transport (PVT) rely on temperatures exceeding 2000°C, and the seed wafer must remain stable under these extreme conditions. Production-grade wafers are engineered to have exceptional thermal stability, which allows for consistent and reliable crystal growth. This temperature resilience is crucial for growing large, defect-free SiC crystals that are used in high-power and high-temperature applications, such as electric vehicles, aerospace systems, and renewable energy technologies. Wafers optimized for high-temperature growth help reduce defects like dislocations and micropipes, ensuring a higher yield of usable SiC material.
4H Silicon Carbide Seed's applications
- Power Electronics
4H-SiC seed wafers are extensively used for growing SiC crystals for high-performance power electronics. Devices made from 4H-SiC, such as MOSFETs, Schottky diodes, and IGBTs, offer high energy efficiency, lower switching losses, and the ability to operate at high voltages and temperatures. These characteristics make them ideal for applications in electric vehicles (EVs), renewable energy systems (such as solar inverters and wind turbines), and industrial power converters. 4H-SiC-based components improve overall energy efficiency and durability, making them highly sought after in modern power systems.
- High-Temperature and Harsh Environments
4H-SiC’s wide bandgap, high breakdown voltage, and excellent thermal conductivity make it perfect for devices operating in extreme environments. Applications such as aerospace systems, oil and gas exploration, and military equipment benefit from 4H-SiC-based semiconductors because they can withstand high temperatures, radiation, and harsh chemical exposure while maintaining stable performance. Sensors, actuators, and other electronic devices in these industries often rely on 4H-SiC components for reliable operations.
- High-Frequency and RF Devices
4H-SiC seed wafers are used in the fabrication of high-frequency and RF (radio frequency) devices. Due to its low loss at high frequencies and high electron mobility, 4H-SiC is preferred for high-frequency communication systems, radar, and satellite communications. Devices built with 4H-SiC offer high efficiency and lower power consumption, making them essential in telecommunication infrastructure, aerospace, and defense industries where performance and reliability are critical.
- LEDs and Optoelectronics
4H-SiC serves as a substrate for growing gallium nitride (GaN) crystals, which are used in blue and ultraviolet (UV) LEDs and laser diodes. These devices are essential in applications like solid-state lighting, automotive lighting, and display technologies. The high thermal conductivity and mechanical strength of 4H-SiC provide a stable platform for GaN devices, enhancing their efficiency and lifespan.
Specification
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Silicon Carbide Seed Wafer Type 4H Dia 157±0.5mm Thickness 500±50um Monocrystall Area ＞153mm Images
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