5*5mm/10*10mm Silicon Carbide Wafer Thickness 350μm Sic 3C-N Type High Mechanical Strength Production Grade
3C-SiC (Cubic Silicon Carbide) is a wide bandgap semiconductor material with good electrical and thermal properties, especially suitable for high-frequency, high-power and electronic device applications. N-type doping is usually achieved by introducing elements such as nitrogen (N) and phosphorus (P), which makes the material electronegative and suitable for a variety of electronic device designs. The bandgap is approximately 3.0 eV, making it suitable for high temperature and high voltage applications. N-type doping still maintains high electron mobility, which enhances the performance of the device. Excellent thermal conductivity helps to improve the heat dissipation ability of power devices. It has good mechanical strength and is suitable for use in harsh environments. It has good resistance to a wide range of chemicals and is suitable for industrial applications. In power electronics, it is used in high-efficiency power converters and drives, suitable for electric vehicles and renewable energy systems.
Features:
· Wide bandgap: Bandgap of approximately 3.0 eV for high temperature and high voltage applications.
· High Electron Mobility: N-type doping provides good electron mobility and enhances the overall performance of the device.
· Excellent thermal conductivity: It has excellent thermal conductivity and effectively improves heat dissipation performance, suitable for high-power applications.
· Good mechanical strength: It has high toughness and compressive strength, and is suitable for use in harsh environments.
· Chemical resistance: Good resistance to a wide range of chemicals, enhancing the stability of the material.
· Adjustable electrical characteristics: By adjusting the doping concentration, different electrical properties can be achieved to meet the needs of a variety of applications.
Technical Parameters:
Applications:
1. Power electronics: for high-efficiency power converters, inverters and drives, widely used in electric vehicles and renewable energy systems.
2. RF & Microwave Equipment: RF amplifiers, microwave equipment, especially suitable for communication and radar systems.
3. Optoelectronics: It can be used as a building block for LEDs and light detectors, especially in blue and ultraviolet applications.
4. Sensors: Applied to a wide range of sensors in high-temperature and high-power environments, providing reliable performance.
5. Wireless Charging and Battery Management: Used in wireless charging systems and battery management devices to improve efficiency and performance.
6. Industrial electrical equipment: Used in industrial automation and control systems to improve energy efficiency and system stability.
Customization:
Our SiC substrate is available in the 3C-N type and is RoHS certified. The minimum order quantity is 10pc and the price is by case. The packaging details are customized plastic boxes. The delivery time is within 30 days and we accept T/T payment terms. Our supply ability is 1000pc/month. The SiC substrate size is 5*5mm/10*10mm. Place of origin is China.
Our services:
1. Factory direct manufacture and sell.
2. Fast, accurate quotes.
3. Reply to you within 24 working hours.
4. ODM: Customized design is avaliable.
5. Speed and precious delivery.
