High-Purity SiC Coated Carrier Plate for Wafer Handling and Transfer
The SiC Carrier Plate (Silicon Carbide Carrier Plate) is a high-performance ceramic component widely used in advanced manufacturing sectors such as semiconductors, LEDs, and power electronics. Renowned for its exceptional thermal resistance, high thermal conductivity, low thermal expansion, and superior mechanical strength, it is the ideal solution for high-temperature processes. ZMSH provides customized SiC Carrier Plate solutions, including design, manufacturing, testing, and after-sales support, ensuring optimal performance and reliability for wafer handling, epitaxial growth, and other critical applications.
Technical specification:
| Property | Value | Method |
| Density | 3.21 g/cc | Sink-float and dimension |
| Specific heat | 0.66 J/g °K | Pulsed laser flash |
| Flexural strength | 450 MPa560 MPa | 4 point bend, RT4 point bend, 1300° |
| Fracture toughness | 2.94 MPa m1/2 | Microindentation |
| Hardness | 2800 | Vicker's, 500g load |
| Elastic ModulusYoung's Modulus | 450 GPa430 GPa | 4 pt bend, RT4 pt bend, 1300 °C |
| Grain size | 2 – 10 μm | SEM |
Key features of SiC Carrier Plate
1. Ultra-High Temperature Resistance – Stable operation up to 1650°C, ideal for CVD, MOCVD, and other high-temperature processes.
2. Superior Thermal Management – Thermal conductivity of 120-200 W/m·K ensures rapid heat dissipation and minimizes thermal stress.
3. Low Thermal Expansion (4.3×10⁻⁶/K) – Exceptional dimensional stability at high temperatures, preventing wafer misalignment or cracking.
4. High Hardness & Wear Resistance – Mohs hardness of 9.2, far exceeding quartz and graphite, extends service life.
5. Chemical Inertness – Resistant to acids, alkalis, and plasma erosion, suitable for harsh environments.
6. High Purity & Contamination-Free – Metal impurity levels <1 ppm, meeting semiconductor-grade cleanliness standards.
Primary applications of SiC Carrier Plate
· Semiconductor Manufacturing – Wafer epitaxy (GaN/SiC), CVD reaction chamber carrier.
· LED Production – Supports sapphire substrates for uniform MOCVD growth.
· Power Electronics – High-temperature sintering carrier for SiC/GaN power devices.
· Advanced Packaging – Precision placement and laser processing substrate.
Process Compatibility, Materials & Applications
| Category | Item | Description |
| Process Compatibility | High-Temperature Epitaxy | Compatible with GaN/SiC epitaxial growth (>1200°C) |
| Plasma Environments | Resists RF/microwave plasma bombardment for etching systems |
| Rapid Thermal Cycling | Excellent thermal shock resistance for repeated heating/cooling |
| Material Types | Reaction-Bonded SiC (RBSiC) | Cost-effective for industrial applications |
| Chemical Vapor Deposition SiC (CVD-SiC) | Ultra-high purity (>99.9995%) for semiconductor processes |
| Hot-Pressed SiC (HPSiC) | High density (>3.15 g/cm³) for heavy wafer loads |
| Core Functions | Wafer Handling & Fixation | Secures wafers without slippage at high temperatures |
| Thermal Uniformity | Optimizes temperature distribution for epitaxial growth |
| Graphite Alternative | Eliminates oxidation and particle contamination risks |
Products pictures of SiC Carrier Plate
ZMSH delivers comprehensive end-to-end solutions for Silicon Carbide Carrier Plates (SiC Carrier Plates), offering customized design services with tailored dimensions, aperture patterns, and surface treatments including mirror polishing and specialized coatings, precision manufacturing utilizing CVD/RBSiC processes that maintain strict batch consistency within ±0.05mm tolerances, rigorous quality inspection protocols, expedited prototype delivery with 72-hour turnaround, and global technical support with 24/7 responsiveness, ensuring customers receive high-performance products with exceptional uniformity and reliability for their critical applications.
Q&A
