12" Sapphire Wafer 250mm Diameter (±0.5mm) 1000µm Thickness C-Plane
This 12-inch (250mm) sapphire wafer delivers industry-leading precision (±0.5mm diameter, 1,000µm thickness) and ultra-high purity (99.99%), optimized for advanced semiconductor and optoelectronic applications. The C-plane (0001) orientation ensures exceptional epitaxial growth quality for GaN-based devices, while its large diameter maximizes production efficiency for high-volume manufacturing. With superior thermal stability (>2,000°C melting point), optical transparency (85%+ from UV to mid-IR), and mechanical robustness (9 Mohs hardness), this wafer is ideal for power electronics, LEDs, laser systems, and cutting-edge quantum technologies.
Key Features of Sapphire Wafer
Large-Format Precision:
Diameter: 250mm ±0.5mm, compatible with 12" semiconductor fabrication lines.
Thickness: 1,000µm ±15µm, engineered for mechanical strength and process uniformity.
Ultra-High Purity (4N):
99.99% pure Al₂O₃, eliminating impurities that degrade optical/electrical performance.
Exceptional Material Properties:
Thermal Stability: Melting point ~2,050°C, suitable for extreme environments.
Optical Clarity: >85% transmission from 350nm to 4,500nm (UV to mid-IR).
Hardness: 9 Mohs, resistant to scratches and chemical corrosion.
Surface Quality Options:
Epi-ready polish: Ra <0.3nm (AFM-measured), ideal for thin-film deposition.
Double-side polishing available for precision optical applications.
Applications of Sapphire Wafer
Advanced Optoelectronics:
GaN-based LEDs/Laser Diodes: Blue/UV LEDs, VCSELs for LiDAR and 3D sensing.
Micro-LED Displays: Uniform substrates for next-gen AR/VR screens.
Power & RF Devices:
5G/6G Power Amplifiers: Low dielectric loss at high frequencies.
HEMTs and MOSFETs: High-voltage transistors for electric vehicles.
Industrial & Defense:
IR Windows/Missile Domes: Transparency in harsh environments (e.g., aerospace).
Sapphire Sensors: Corrosion-resistant covers for industrial monitoring.
Emerging Technologies:
Wearable Tech: Ultra-durable cover glass for smartwatches.
Specifications
| Parameter | Value |
| Diameter | 250mm ±0.5mm |
| Thickness | 1,000µm ±15µm |
| Orientation | C-plane (0001) ±0.2° |
| Purity | >99.99% (4N) |
| Surface Roughness (Ra) | <0.3nm (epi-ready) |
| TTV | <15µm |
| Bow | <50um |
Q&A
Q1: Why is a 12" sapphire wafer advantageous over smaller diameters?
A1: The 250mm size reduces production costs per chip by enabling more dies per wafer, critical for high-volume manufacturing (e.g., LED fab lines). It also aligns with 300mm Si wafer tool compatibility for hybrid semiconductor processes.
Q2: How does 1,000µm thickness benefit device performance?
A2: The 1mm thickness enhances mechanical stability during handling and high-temperature processes (e.g., MOCVD), while maintaining optimal thermal conductivity for heat dissipation in power devices.
Q3: Can this wafer be used for extreme UV (EUV) applications?
A3: Yes. Its high UV transparency (down to 350nm) and radiation resistance make it suitable for EUV lithography components and space-based optics.
Q4: Is the C-plane orientation customizable?
A5: Yes. A-plane (1120) and R-plane (1102) wafers can be produced for specialized applications like SAW filters or heteroepitaxy.
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Sapphire Wafer 12'' Dia 250mm±0.5mm Thickness 1000 Um C-Plane 99.99% Pure Images
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