8" Sapphire Wafer 200mm Diameter (±0.2mm), 725µm Thickness, C-Plane, 99.99% Pure
This high-purity 8-inch (200mm) sapphire wafer features exceptional dimensional precision (±0.2mm diameter, 725µm thickness) and crystallographic orientation (C-plane), making it ideal for demanding optoelectronic and semiconductor applications. With 99.99% purity and superior mechanical/thermal stability, the wafer serves as an optimal substrate for LED, laser diode, and RF device fabrication. Its uniform surface finish and chemical inertness ensure reliability in harsh environments, while its large diameter supports cost-effective mass production.
Key Features of Sapphire Wafers
Precision Geometry:
- Diameter: 200mm ±0.2mm, ensuring compatibility with standard semiconductor tools.
- Thickness: 725µm ±25µm, optimized for mechanical strength and process stability.
Crystallographic Excellence:
- C-plane (0001) orientation, preferred for epitaxial growth of GaN in LED/HEMT devices.
- Low dislocation density (<1,000 cm⁻²) for high-performance device integration.
Ultra-High Purity:
- >99.99% (4N) purity, minimizing impurities that affect optical/electrical performance.
Robust Material Properties:
- Hardness: 9 Mohs, scratch-resistant for handling durability.
- Thermal Stability: Melting point ~2,050°C, suitable for high-temperature processes.
- Optical Transparency: 85%+ in visible to near-IR spectra (350nm–4,500nm).
Surface Quality:
- Epitaxy-ready polish: Ra <0.3nm for defect-free thin-film deposition.
- Optional double-side polishing upon request.
Applications of Sapphire Wafers
Optoelectronics:
Substrate for blue/green/white LEDs (InGaN/GaN epitaxy).
Laser diodes (edge-emitting/VCSELs) in displays and communications.
Power Electronics:
RF devices (5G/6G antennas, power amplifiers) due to low dielectric loss.
High-electron-mobility transistors (HEMTs) for electric vehicles.
Industrial & Defense:
IR windows, missile domes (sapphire’s transparency to mid-IR).
Protective covers for sensors in corrosive/abrasive environments.
Emerging Technologies:
Quantum computing (SPD crystal substrates).
Wearable device screens (scratch-resistant covers).
Specifications
| Parameter | Value |
| Diameter | 200mm ±0.2mm |
| Thickness | 725µm ±25µm |
| Orientation | C-plane (0001) ±0.2° |
| Purity | >99.99% (4N) |
| Surface Roughness (Ra) | <0.3nm (epi-ready) |
| TTV | ≤15um |
| WARP | ≤30um |
| BOW | -30~10um |
Q&A
Q1: Why choose C-plane sapphire for GaN epitaxy?
A1: The C-plane’s hexagonal symmetry matches GaN’s crystal structure, reducing lattice mismatch and enabling high-quality epitaxial growth for LEDs and power devices.
Q2: How does thickness (725µm) impact wafer performance?
A2: 725µm balances mechanical stability (reducing breakage during handling) with thermal conductivity, critical for uniform heat dissipation in MOCVD processes.
Q3: Can this wafer be used for high-power laser applications?
A3: Yes. Its high thermal conductivity and transparency at UV-NIR wavelengths make it suitable for laser diode substrates and optical windows.
Q4: Are custom orientations (e.g., R-plane) available?
A5: Yes. A-plane, R-plane, and M-plane wafers can be customized for specialized applications like SAW devices.
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Sapphire Wafer 8'' Dia 200mm±0.2mm Thickness 725Um C-Plane 99.99% Pure Images
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